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| PJRDA200-4 Low Capacitance TVS Diode Array This diode array is configured to protect up to four data transmission lines acting as a line terminator, minimizing overshoot and undershoot conditions due to bus impedance as well as protect against over-voltage events as electrostatic discharges. 5 DRAFT SPEC 8 4 SPECIFICATION FEATURES DC Forward Current Max of 200mA Maximum Capacitance of 5.0pF at 0Vdc 1MHz Line-to-Ground I/O1 1 1 8 REF2 Maximum Leakage Current of 0.5A @ 100V Repetitive Peak Inverse Voltage of 200V Industry Standard SMT Package SOIC-8 IEC61000-4-2, IEC61000-4-4 and IEC61000-4-5 Full Compliance 100% Tin Matte finish (LEAD-FREE PRODUCT) I/O2 4 5 REF1 2 7 I/O4 REF1 3 6 I/O3 REF2 SOIC-8 APPLICATIONS Set Top Box Input/Output lines LAN/WLAN Access Point terminals Video Signal line protection I 2C Bus Protection MAXIMUM RATINGS Tj = 25C Unless otherwise noted Rating Repetitive Peak Inverse Voltage Continuous Reverse Voltage Peak Pulse Current (8/20s Waveform) Average Rectified Forward Current, Per Diode Power Dissipation, Tj = 85C, IF = 200mA, Per Diode Operating Junction Temperature Range Storage Temperature Range Soldering Temperature, t max = 10 s Thermal Resistance, Junction to Ambient Symbol V RRM VR I PP I F(AV) PD Tj Tstg TL R JA Value 200 100 24 200 300 -55 to +150 -55 to +150 260 200 Units V V A mA mW C C C C/W 10/12/2005 Page 1 www.panjit.com PJRDA200-4 ELECTRICAL CHARACTERISTICS Parameter Symbol V RRM V BR VF IR I BR = 10A I PP = 1A I PP = 10A V R = 100V 0Vdc Bias, f =1 MHz Between I/O pins and REF2 (Ground) 0Vdc Bias, f =1 MHz Between I/O pins 2.2 150 0.95 2.0 0.5 5 Tj = 25C unless otherwise noted Conditions Min Typ Max 200 Units V V V V A pF DRAFT SPEC Repetitive Peak Inverse Voltage Breakdown Voltage Forward Voltage (8/20s Pulse) Reverse Leakage Current Off-State Junction Capacitance CJ pF 10/12/2005 Page 2 www.panjit.com PJRDA200-4 PACKAGE DIMENSIONS AND SUGGESTED PAD LAYOUT DRAFT SPEC 10/12/2005 Page 3 www.panjit.com |
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